AR
C
HIVE INF
O
RMATI
O
N
A
RCHIVE INFORMATION
2
RF Device Data
Freescale Semiconductor
MRF18030ALR3 MRF18030ALSR3
Table 4. Electrical Characteristics
(TC
=25°C, 50 ohm system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain--Source Breakdown Voltage
(VGS
=0Vdc,ID
=20μAdc)
V(BR)DSS
65
?
?
Vdc
Zero Gate Voltage Drain Current
(VDS
=26Vdc,VGS
=0Vdc)
IDSS
?
?
1
μAdc
Gate--Source Leakage Current
(VGS
=5Vdc,VDS
=0Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
=10Vdc,ID
= 100
μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS
=26Vdc,ID
= 250 mAdc)
VGS(Q)
2
3.9
4.5
Vdc
Drain--Source On--Voltage
(VGS
=10Vdc,ID
=1Adc)
VDS(on)
?
0.29
0.4
Vdc
Forward Transconductance
(VDS
=10Vdc,ID
=1Adc)
gfs
?
2
?
S
Dynamic Characteristics
Reverse Transfer Capacitance
(1)
(VDS
=26Vdc±
30 mV(rms)ac @ 1 MHz, VGS
=0Vdc)
Crss
?
1.3
?
pF
Functional Tests
(In Freescale Test Fixture)
(2)
Output Power, 1 dB Compression Point
(VDD
=26Vdc,IDQ
= 250 mA, f = 1805 -- 1880 MHz)
P1dB
27
30
?
W
Common--Source Amplifier Power Gain @ 30 W
(VDD
=26Vdc,IDQ
= 250 mA, f = 1805 -- 1880 MHz)
Gps
13
14
?
dB
Drain Efficiency @ 30 W
(VDD
=26Vdc,IDQ
= 250 mA, f = 1805 -- 1880 MHz)
η
46.5
50
?
%
Input Return Loss @ 30 W
(VDD
=26Vdc,IDQ
= 250 mA, f = 1805 -- 1880 MHz)
IRL
?
-- 1 2
-- 9
dB
1. Part internally matched both on input and output.
2. Device specifications obtained on a Production Test Fixture.
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